VBO of GaAs/GaAsxSb 1−x dependent on the Sb mole fraction (dots
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PDF) Half-occupation approach for the ab initio calculation of
The primitive unit cells of four Fe3Si/GaAs heterostructure
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VBO of GaAs/GaAsxSb 1−x dependent on the Sb mole fraction (dots
The primitive unit cells of four Fe3Si/GaAs heterostructure
Contour plot of the spin density within the NiO2 layers (left
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Plots of Excess molar volume (V E ) against mole fraction for the
VBO of GaAs/GaAsxSb 1−x dependent on the Sb mole fraction (dots
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